*1994 to present*

- K.C. Rajkumar, A. Madhukar, P. Chen, A. Konkar, L. Chen, K. Rammohan, D.H. Rich,"Realization of Three-Dimensionally Confined Structures via OneStep In-Situ MBE on Appropriately Patterned GaAs (111)," JVSTB
**12**(2) 1071 (1994).

- A. Madhukar, Q. Xie, P. Chen, A. Konkar, "The nature of strained InAs three-dimensional island formation and distribution on GaAs(100)," App. Phys. Lett.
**64**(20) 2727 (1994).

- K. Kaviani, A. Madhukar, J.J. Brown and L.E. Larson, "Realization of doped-channel MISFETS with high breakdown voltage in AlGaAs/InGaAs based material system," Electronics Letters,
**30**, 669 (1994).

- Z. Karim, C. Kryiakakis, A.R. Tanguay, Jr., K. Hu, L. Chen, and A. Madhukar, "Externally-deposited phase-compensating dielectric mirrors for asymeetric Fabry-Perot cavity tuning," App. Phys. Lett.
**64**, 2913 (1994).

- P. Chen, Q. Xie, A. Madhukar, Li Chen, & A. Konkar, "Mechanisms of Strained Island Formation in Molecular Beam Epitaxy of InAs on GaAs(100),"
*PCSI Proceedings, Jan. 24-28, 1994 Meeting, Mohonk, NY, J. Vac. Sci. Technol.***B 12**, 2568 (1994).

- Ching-Mei Yang, D. Marherefteh, E. Garmire, L. Chen, Kezhhong Hu, and A. Madhukar, "Sweep-out times of electrons and holes in a InGaAs/GaAs multiple quantum well modulator," Appl. Phys. Lett.
**65**, 995 (1994).

- Q. Xie, P. Chen, and A. Madhukar, "InAs island-induced-strain driven adatom migration during GaAs overlayer growth" App. Phys. Lett.
**65**(16), 2051 (1994).

- A. Madhukar, "Vapour Phase Synthesis of Thin Films: Towards a Unified Atomistic and Kinetic Framework",
*Proc. of Symposium, TMS/ASM Mtg., Rosemont, IL, October 2 -6, 1994*, Novel Tech., 191-210(1994).

- Z. Karim, C. Kyriakakis, A.R. Tanguay, Jr., R.F. Cartland, K. Hu, L. Chen, and A. Madhukar, "Post-growth tuning of inverted cavity InGaAs/AlGaAs spatial light modulators using phase compensating dielectric mirrors", Appl. Phys. Lett.
**66**, 2774 (1995) .

- Q. Xie, A. Konkar, A. Kalburge, T.R. Ramachandran, P. Chen, R. Cartland, A. Madhukar, H.T. Lin, and D.H. Rich, "Structural and Optical behaviour of Strained InAs quantum boxes grown on planar and patterned GaAs(100) Substrates by Molecular beam epitaxy", J. Vac. Sci. Technol.
**B 13**(2), 642 (1995).

- R. Viswanathan, A. Madhukar, and S.B. Ogale, "Role of step orientation and step-step interaction in the in-situ creation of laterally confined semiconductor nanostructures via growth: a simulated annealing study on a parallel computing platform", Journal of Crystal Growth
**150**, 190 (1995).

- A. Konkar, K.C. Rajkumar, Q. Xie, P. Chen, A. Madhukar, H.T. Lin, and D.H. Rich, "In-situ fabrication of three-dimensionally confined GaAs and InAs volumes via growth on non-planar patterned GaAs(001) substrates", Journal of Crystal Growth
**150**, 311 (1995).

- Q. Xie, P. Chen, A. Kalburge, T.R. Ramachandran, A. Nayfanov, A. Konkar, and A. Madhukar, "Realization of optically active strained InAs isalnd quantum boxes on GaAs(100) via molecular beam epitaxy and the role of island induced strain fields", Journal of Crystal Growth
**150**, 357 (1995).

- T.C. Hasenberg, P. Chen, A. Madhukar, A.R. Kost, J. Visher, and A. Konkar, "InAs/GaAs short period strained-layer superlattice modulators grown using advanced digital reflection high-energy electron diffraction techniques", Journal of Crytal Growth
**150**, 1368 (1995).

- A. Madhukar, P. Chen, Q. Xie, A. Konkar, T.R. Ramachandran, N.P. Kobayashi, and R. Viswanathan, "Semiconductor Nanostructures: Nature's Way", Proc. NATO Advanced Research Workshop, 2/20-24, 1995, Ringberg Castle(Germany), Eds. K. Eberl, P. Demecster, and P. Petroff, Low Dimensional Structures prepared by Epitaxial Growth or Regrowth on Patterned Substrates, 19-33, (Kluwer Academic Publishers, The Netherlands, 1995).

- C. Kyriakakis, Z. Karim, A.R. Tanguay, Jr., R.F. Cartland, A. Madhukar, S. Piazzolla, B.K. Jenkins, C.B. Kuznia, A.A. Sawchuk, and C. von der Malsburg, "Photonic Implementations of Neural Networks", OSA Technical Digest Series Vol.
**10**, 128 (1995).

- Q. Xie, A. Madhukar, P. Chen, N. Kobayashi, "Vertically Self-Organized InAs quantum box islands on GaAs(100)", Phys. Rev. Letters
**75**, 2542 (1995).

- Q. Xie, N.P. Kobayashi, T.R. Ramachandran, A. Kalburge, P. Chen, and A. Madhukar, "InAs Island Quantum Box Formation and Vertical Self-Organization on GaAs (100) Via molecular Beam Epitaxy", Paper presented at MRS Spring '95 Meeting (April 17-21, 1995, San Francisco, CA), MRS Symposium Proc.
**379**, 177-183 (1995).

- A. Konkar, A. Madhukar, and P. Chen, "Creating 3-D Confined Nanoscale Strained Structures Via Substrate Encoded Size-Reducing Epitaxy and The Enhancement of Critical Thickness for Island Formation", Paper presented at MRS Spring '95 Meeting (April 17-21, 1995, San Francisco, CA), MRS Symposium Proc.
**380**, 17-22 (1995).

- A. Madhukar, A. Konkar, and P. Chen, "In-Situ Formation of Laterally Confined Semiconductor Structures Via Growth on Nonplanar Patterned Substrates",
*Paper presented at the Third IU-MRS International Conference (October 17-20, 1995, Seoul, Korea)*, IUMRS-ICA '95 Proc., Eds. S.W. Kim and S.J. Park, 1173-1181 (1995).

- A. Madhukar, W. Yu, R. Viswanathan, and P. Chen, "Some Computer Simulations of Semiconductor Thin Film Growth and Strain Relaxation in a Unified Atomistic and Kinetic Model",
*MRS Symposium Proceedings***408**, 413 (1995).

- Q. Xie, N.P. Kobayashi, T.R. Ramachandran, A. Kalburge, P. Chen, and A. Madhukar, "Strained Coherent InAs Quantum box islands on GaAs(100): Size equalization, vertical self-organization and optical properties", Jour. Vac. Sci. Tech.
**B14**(3), (May/June 1996).

- N.P. Kobayashi, T.R. Ramachandran, P. Chen, and A. Madhukar, "In-Situ, atomic force microscope studies of the evolution of InAs three-dimensional islands on GaAs(001)", Appl. Phys. Lett.
**68**(23), 3299 (1996).

- R.F. Cartland, P. Chen, and A. Madhukar, "High contrast, large area, inverted, 2D spatial light modulators for flip chip bonding to silicon microelectronic driver chips",
*OSA Annual Meeting, Oct. 20-24, 1996, Rochester, New York*, paper TuCC3 (1996) .

- A. Madhukar, "A unified atomistic and kinetic framework for growth front morphology evolution and defect initiation in strained epitaxy", Journal of Crystal Growth
**163**, 149-164 (1996) .

- D.H. Rich, H.T. Lin, A. Konkar, P. Chen, and A. Madhukar, "Time-resolved cathodoluminescence study of carrier relaxation in GaAs/AlGaAs layers grown on a patterned GaAs(001) substrate", Appl. Phys. Lett.
**69**(5), 665 (1996).

- Q. Xie, A. Kalburge, P. Chen, and A. Madhukar, "Observation of lasing from vertically self-organized InAs three-dimensional island quantum boxes on GaAs(001)", IEEE Photonics Technology Letters, Vol.
**8**, 965. (1996).

- R. Heitz, A. Kalburge, Q. Xie, M. Veit, M. Grundmann, P. Chen, A. Madhukar, and D. Bimberg, "Energy relaxation in InAs/GaAs quantum dots",
*Proc. of the 23rd Int. Conf. on the Physics of Semiconductors, Berlin Germany, 1996*, Edited by M. Scheffler and R. Zimmermann, 1425, (World Scientific, Singapore, 1996).

- P. Chen, A. Konkar, H.T. Lin, D.H. Rich, and A. Madhukar, "Lattice-matched and mismatched quantum boxes fabricated via size-reducing growth on nonplanar patterned substrates",
*Proc. of the 23rd Int. Conf. on the Physics of Semiconductors, Berlin, Germany, 1996*, Edited by M. Scheffler and R. Zimmermann, 1277, (World Scientific, Singapore, 1996).

- A. Konkar, H.T. Lin, D.H. Rich, P. Chen, A. Madhukar, "Growth controlled fabrication and cathodoluminescence study of 3D confined GaAs volumes on non-planar patterned GaAs(001) substrates", J. Crys. Growth
**175/176**, 741 (1997).

- T.R. Ramachandran, R. Heitz, P. Chen, and A. Madhukar, "Mass transfer in Stranski-Krastanow growth of InAs on GaAs", Appl. Phys. Lett.
**70**(5), 640 (1997).

- D. H. Rich, H. T. Lin, A. Konkar, P. Chen, and A. Madhukar, "Cathodoluminescence study of band filling and carrier thermalization in GaAs/AlGaAs quantum boxes", J. Appl. Phys.
**81**, 1781 (1997).

- H.T. Lin, D.H. Rich, A. Konkar, P. Chen and A. Madhukar, "Carrier relaxation and recombination in GaAs/AlGaAs quantum heterostructures and nanostructures probed with time-resolved cathodoluminescence," J. Appl. Phys.
**81**, 3186 (1997).

- R. Heitz, T.R. Ramachandran, A. Kalburge, Q. Xie, I. Mukhametzhanov, P. Chen and A. Madhukar, "Observation of re-entrant 2D to 3D morphology transition in highly strained epitazy: InAs on GaAs", Phys. Rev. Lett.
**78**, 4071 (1997).

- T. R. Ramachandran, R. Heitz, N.P. Kobayashi, A. Kalburge, W. Yu, P. Chen, and A. Madhukar, "Re-entrant behavior of 2D to 3D morphology change and 3D island lateral size equalization via mass exchange in Stranski-Krastanow growth: InAs on GaAs (001)", J. Cryst. Growth,
**175/176**, 216 (1997).

- A. Kalburge, A. Konkar, T.R. Ramachandran, P. Chen and A. Madhukar, "Focused ion beam assisted chemically etched mesas on GaAs(001) and the nature of subsequent molecular beam epitaxial growth", J. Appl. Phys.
**82**, 859 (1997).

- A. Kalburge, T.R. Ramachandran, R. Heitz, N.P. Kobayashi, Q. Xie, P. Chen, and A. Madhukar, "Optical investigations of InAs growth on GaAs and lasing in singly and multiply stacked island quantum boxes", MRS Proc.
**448**, 487 (1997).

- T.R. Ramachandran, N.P. Kobayashi, P. Chen, and A. Madhukar, "The formation and evolution of InAs 3D islands on GaAs(001) and a comparative C-AFM and NC-AFM study of InAs 3D islands", MRS Proc.
**440**, 31 (1997).

- W. Yu and A. Madhukar, "Molecular Dynamics study of coherent island energetics, stresses, and strains in highly strained epitaxy", Phys. Rev. Lett.
**79**, 905 (1997).

- T.R. Ramachandran, A. Madhukar, P. Chen and B.E. Koel, "Imaging and Direct Manipulation of Nanoscale Three-Dimensional Features using the Noncontact Atomic Force Microscope", Jour. Vac. Sc. Tech.
**A 16**, 1425 (1998).

- I.G. Rosen, T. Parent, C. Cooper, P. Chen, and A. Madhukar, "A Neutral Network Based Approach to Determining a Robust Process Recipe for the Plasma Enhanced Deposition of Silicon Nitride Thin Films", IEEE Trans. on Control Systems Technology (under Review).

- C. Wang, P. Chen, A. Madhukar, and T. Khan, "A Machine Condition Transfer Function Approach to Run-to-Run and Machine-to-Machine Reproducibility of III-V Compound Semiconductor Molecular Beam Epitaxy", IEEE Trans. Semiconductor Manufacturing
**12**, 66 (1999).

- M. Bachlechner, A. Omeltchenko, A. Nakano, R. Kalia, P. Vashishta, I. Ebbsjo, A. Madhukar, and P. Messina, "Multimillion-Atom Molecular Dynamics Simulation of Atomic Level Stresses in Si(111)/Si
_{3}N_{4}(0001) Nanopixels", Appl. Phys. Lett.**72**, p. 1969 (1998).

- A. Omeltchenko, M. Bachlechner, A. Nakano, R. Kalia, P. Vashishta, I. Ebbsjo, A. Madhukar, and P. Messina, "Stress Domains in Si(111)/a0Si
_{3}N_{4}Nanopixel-10 million-Atom Molecular Dynamics Simulations on Parallel Computers", Phys. Rev. Lett (Submitted Feb. '98).

- A. Nakano, M. Bachlechner, T. Campbell, R. Kalia, A. Omeltchenko, K. Tsuruta, P. Vashishta, S. Ogata, I. Ebbsjo, A. Madhukar, "Atomistic Simulation of Nanostructured Materials Using Parallel Multiresojution Algorithms", IEEE Computational Science & Engineering, p. 68 (Oct.-Dec. 1998).

- A. Madhukar, T.R. Ramachandran, A. Konkar, I. Mukhametzhanov, W. Yu, P. Chen, "On the atomistic and kinetic nature of strained epitaxy and formation of coherent 3D island quantum boxes", Appl. Surface Science,
**123/124**, 266 (1998).

- A. Konkar, A. Madhukar, and P. Chen, "Stress-engineered spatially selective self-assembly of strained InAs quantum dots on nonplanar patterned GaAs(001) substrates", Appl. Phys. Lett.
**72**, 220 (1998).

- T. Parent, R. Heitz, P. Chen, and A. Madhukar, "Real-time Feedback control of thermal Cl2 etching of GaAs based on in-situ spectroscopic ellipsometry", MRS Symp. Proc.
**502**, 71 (1998).

- I.G. Rosen, T. Parent, P. Chen, C. Wang, R. Heitz, M. Nagarajan, and A. Madhukar, "Feedback Control of Thermal Chlorine (Cl
_{2}) Etching of Gallium Arsenide (GaAs) Using In-Situ Spectroscopic Ellipsometry Sensing", Proc. American Control Conf., p. 2150 (1998).

- C. Baur, A. Bugacov, B.C. Gazen, B. Koel, A. Madhukar, T.R. Ramachandran, A.A.G. Requicha, R. Resch, and P. Will, "Nanoparticle Manipulation by Mechanical Pushing: Underlying Phenomena and Real-Time Monitoring", Science (Submitted Mar. '98).

- T.R. Ramachandran, C. Baur, A. Bugacov, A. Madhukar, B.E. Koel, A. Requicha, and C. Gazen, "Direct and Controlled Manipulation of Nanometer-Sized Particles Using the Non-Contact Atomic Force Microscope", Nanotechnology 9, 237
(1998).

- A.A.G. Requicha, C. Baur, A. Bugacov, B.C. Gazen, B. Koel, A. Madhukar, T.R. Ramachandran, R. Resch, P. Will, "Nanorobotic Assembly of Two-Dimensional Structures", Proc. ICRA Conf. (1998).

- R. Heitz, A. Kalburge, Q. Xie, M. Grandmann, P. Chen, A. Hoffmann, A. Madhukar, D.Bimberg, "Excited States and Energy Relaxation in Stacked InAs/GaAs Quantum Dots", Phys. Rev.
**B 57**, 9050 (1998).

- T.R. Ramachandran, A. Madhukar, I. Mukhametzhanov, R. Heitz, A. Kalburge, Q. Xie, P. Chen, "Nature of Stranski-Krastanow growth of InAs on GaAs(001)", J. Vac. Sci. Technol.
**B 16(3)**, 1330 (1998).

- P. Chen, C. Wang, A. Madhukar, T. Khan, A. Small, Z. Yan, R. Viswanathan, "Reflection High-Energy Electron Diffraction as an Intrinsic Material Property Sensor for Machine Condition Transfer Function in Molecular Beam Epitaxial Growth of III-IV Compound Semiconductors", MRS Proc.
**502**, 47 (1998).

- Y. Tang, D. H. Rich, I. Mukhametzhanov, P. Chen, and A. Madhukar, "Self-assembled InAs/GaAs quantum dots studied with excitation dependent cathodoluminescence", J. Appl. Phys.
**84**, 3342 (1998).

- I. Mukhametzhanov, R. Heitz, J. Zeng, P. Chen, and A. Madhukar, "Independent Manipulation of Density and Size of Stress-Driven Self Assembled Quantum Dots", Appl. Phys. Lett.
**73**, 1841 (1998).

- R. Heitz, I. Mukhametzhanov, P. Chen, and A. Madhukar, "Excitation Transfer in Self-Organized Asymmetric quantum-dot pairs", Phys. Rev.
**B 58**, R10151 (1998).

- R. Heitz, M. Veit, A. Kalburge, Q. Xie, M. Grundmann, P.Chen, N.N. Ledentsov, A. Hoffmann, A. Madhukar, D. Bimberg, V. M. Ustinov, P.S. Kop'ev, Zh.I. Alferov, "Hot carrier relaxation in InAs/GaAs quantum dots", Physica
**E 2**, 578 (1998).

- R. Resch, A. Bugacov, B.E. Koel, A. Madhukar, A.A.G. Requicha, P. Will, `Manipulation of nanoparticles using dynamic force microscopy: simulation and experiments", Appl. Phys.
**A67**, 265 (1998).

- D. H. Rich, Y. Tang, A. Konkar, P. Chen, A. Madhukar, "Polarized cathodluminescence study of selectively grown self-assembled InAs/GaAs quantum dots," J. Appl. Phys.
**84**, 6337 (1998).

- I.G. Rosen, T. Parent, C. Cooper, P. Chen, and A. Madhukar, "Locating Sensitivity Minimizing Process Inputs in the Plasma Enhanced Chemical Vapor Deposition (PECVD) of Sillicon Nitride Thin Films: A Neural Network Based Approach" American Control Conference (In Press).

- C. Baur, A. Bugacov, B.E. Koel, A. Madhukar, N. Montoya, T.R. Ramachandran, A.A.G. Requicha, R. Resch, and P. Will, "Nanoparticle manipulation by mechanical pushing: underlying phenomena and real-time monitoring", Nanotechnology
**9**, 360 (1998).

- R. Resch, C. Baur, A. Bugacov, B.E. Koel, A. Madhukar, and A.A.G. Requicha, "Building and manipulating 3-D and linked 2-D structures of nanoparticles using scanning force microscopy", Langmuir
**14**(1998).

- C. Wang, P. Chen, A. Madhukar and T. Kahn, "A Machine Condition Transfer Function Approach to Run-to-Run and Machine-to-Machine Reproducibility of III-V Compound Semiconductor Molecular Beam Epitaxy",IEEE Trans. Semiconductor Manufacturing
**12**, 66 (1999).

- M. Bachlechner, A. Omeltchenko, K. Tsuruta, A. Nakano, R. Kalia, P. Vashishta, I. Ebbsjo, A Madhukar, "Structural Correlations and Stress Distribution at Silicon/Silicon Nitride Interface", Oxford Press (1999).

- R. Heitz, I. Mukhametzhanov, J. Zeng, P. Chen, A. Madhukar, D. Bimberg, "Excitation transferin novel self-organized quantum dot structures", Superlatices and Microstructures,
**25**, No 1/2, 97(1999).

- R. Heitz, I. Mukhametzhanov, A. Madhukar, A. Hoffmann, D. Bimberg,
"Temperature dependent optical properties of self organized InAs/GaAs quantum dots", J. Electronic Materials
**28**, 520 (1999).

- I. Mukhametzhanov, Z. Wei, R. Heitz, & A. Madhukar, "Punctuated Island Growth: An Approach to Examination and Control of Quantum Dot Density, Size, and Shape Evolution", Appl. Phys. Lett.
**75**, 85 (1999).

- R. Heitz, I. Mukhametzanov, H. Born, M. Grundmann, A. Hoffman, A.
Madhukar, D. Bimberg, "Hot carrier relaxation in InAs/GaAs quantum dots"
Physica
**B272**, 8 (1999).

- R. Heitz, I. Mukhametzhanov, O. Stier, A. Madhukar, and D. Bimberg,
"Enhanced Polar Exciton-LO-Phonon Interaction in Quantum Dots", Phys.Rev. Lett.,
**83**, 4654 (1999).

- R. Resch, C. Baur, A. Bugacov, B.E. Koel, P.M. Echternack, A. Madhukar, N. Montoya, A.A.G. Requicha, and P. Will, "Linking and Manipulation of Gold and Multinanoparticle Structures Using Dithiols and Scanning Force Microscopy", J. Phys. Chem.
**B103**, 3647 (1999).

- R. Heitz, I. Mukhametzhanov, O. Stier, A. Hoffmann, A. Madhukar, and D. Bimberg, "Electronic properties of InAs/GaAs quantum dots", SQS Proc. (In Press)

- R. Resch, D. Lewis, S. Meltzer, N. Montoya, B.E. Koel, A. Madhukar,
A.A.G. Requicha, P. Will, "Manipulation of gold nanoparticles in liquid
environments using scanning force microscopy", Ultramicroscopy
**82**135 (2000).

- M.A. Makeev and A. Madhukar, "Simulations of atomic level stresses in systems of buried Ge/Si islands", Phys. Rev. Lett.
**86**, 5542 (2001). - S. Meltzer, R. Resch, B.E. Koel, M.E. Thompson,, A. Madhukar, A.A.G. Requicha, and P.Will, "Fabrication of Nanostructures by Hydroxylamine Seeding of Gold Nanoparticle Templates", Langmuir,
**17**, 1713 (2001). - R. Resch, S. Meltzer, T. Vallant, H. Hoffman, B.E. Koel, a. Madhukar, A.A.G. Requicha, and P. Will, "Immobilizing Au nanoparticles on SiO2 surfaces using octadecylsiloxane monolayers", Langmuir,
**17**, 5666 (2001). - A. Madhukar, "Stress Engineered Quantum dots: Nature's Way", in "Nano Optoelctronics: Concepts, Physics, and Devices", Ed. M. Grundmann, Springer-Verlag, (Berline 2002).