Publications:

Complete list here

1994 to present

  1. K.C. Rajkumar, A. Madhukar, P. Chen, A. Konkar, L. Chen, K. Rammohan, D.H. Rich,"Realization of Three-Dimensionally Confined Structures via OneStep In-Situ MBE on Appropriately Patterned GaAs (111)," JVSTB 12 (2) 1071 (1994).

  2. A. Madhukar, Q. Xie, P. Chen, A. Konkar, "The nature of strained InAs three-dimensional island formation and distribution on GaAs(100)," App. Phys. Lett. 64 (20) 2727 (1994).

  3. K. Kaviani, A. Madhukar, J.J. Brown and L.E. Larson, "Realization of doped-channel MISFETS with high breakdown voltage in AlGaAs/InGaAs based material system," Electronics Letters, 30, 669 (1994).

  4. Z. Karim, C. Kryiakakis, A.R. Tanguay, Jr., K. Hu, L. Chen, and A. Madhukar, "Externally-deposited phase-compensating dielectric mirrors for asymeetric Fabry-Perot cavity tuning," App. Phys. Lett. 64, 2913 (1994).

  5. P. Chen, Q. Xie, A. Madhukar, Li Chen, & A. Konkar, "Mechanisms of Strained Island Formation in Molecular Beam Epitaxy of InAs on GaAs(100)," PCSI Proceedings, Jan. 24-28, 1994 Meeting, Mohonk, NY, J. Vac. Sci. Technol. B 12, 2568 (1994).

  6. Ching-Mei Yang, D. Marherefteh, E. Garmire, L. Chen, Kezhhong Hu, and A. Madhukar, "Sweep-out times of electrons and holes in a InGaAs/GaAs multiple quantum well modulator," Appl. Phys. Lett. 65, 995 (1994).

  7. Q. Xie, P. Chen, and A. Madhukar, "InAs island-induced-strain driven adatom migration during GaAs overlayer growth" App. Phys. Lett. 65 (16), 2051 (1994).

  8. A. Madhukar, "Vapour Phase Synthesis of Thin Films: Towards a Unified Atomistic and Kinetic Framework", Proc. of Symposium, TMS/ASM Mtg., Rosemont, IL, October 2 -6, 1994, Novel Tech., 191-210(1994).

  9. Z. Karim, C. Kyriakakis, A.R. Tanguay, Jr., R.F. Cartland, K. Hu, L. Chen, and A. Madhukar, "Post-growth tuning of inverted cavity InGaAs/AlGaAs spatial light modulators using phase compensating dielectric mirrors", Appl. Phys. Lett. 66, 2774 (1995) .

  10. Q. Xie, A. Konkar, A. Kalburge, T.R. Ramachandran, P. Chen, R. Cartland, A. Madhukar, H.T. Lin, and D.H. Rich, "Structural and Optical behaviour of Strained InAs quantum boxes grown on planar and patterned GaAs(100) Substrates by Molecular beam epitaxy", J. Vac. Sci. Technol. B 13(2), 642 (1995).

  11. R. Viswanathan, A. Madhukar, and S.B. Ogale, "Role of step orientation and step-step interaction in the in-situ creation of laterally confined semiconductor nanostructures via growth: a simulated annealing study on a parallel computing platform", Journal of Crystal Growth 150, 190 (1995).

  12. A. Konkar, K.C. Rajkumar, Q. Xie, P. Chen, A. Madhukar, H.T. Lin, and D.H. Rich, "In-situ fabrication of three-dimensionally confined GaAs and InAs volumes via growth on non-planar patterned GaAs(001) substrates", Journal of Crystal Growth 150, 311 (1995).

  13. Q. Xie, P. Chen, A. Kalburge, T.R. Ramachandran, A. Nayfanov, A. Konkar, and A. Madhukar, "Realization of optically active strained InAs isalnd quantum boxes on GaAs(100) via molecular beam epitaxy and the role of island induced strain fields", Journal of Crystal Growth 150, 357 (1995).

  14. T.C. Hasenberg, P. Chen, A. Madhukar, A.R. Kost, J. Visher, and A. Konkar, "InAs/GaAs short period strained-layer superlattice modulators grown using advanced digital reflection high-energy electron diffraction techniques", Journal of Crytal Growth 150, 1368 (1995).

  15. A. Madhukar, P. Chen, Q. Xie, A. Konkar, T.R. Ramachandran, N.P. Kobayashi, and R. Viswanathan, "Semiconductor Nanostructures: Nature's Way", Proc. NATO Advanced Research Workshop, 2/20-24, 1995, Ringberg Castle(Germany), Eds. K. Eberl, P. Demecster, and P. Petroff, Low Dimensional Structures prepared by Epitaxial Growth or Regrowth on Patterned Substrates, 19-33, (Kluwer Academic Publishers, The Netherlands, 1995).

  16. C. Kyriakakis, Z. Karim, A.R. Tanguay, Jr., R.F. Cartland, A. Madhukar, S. Piazzolla, B.K. Jenkins, C.B. Kuznia, A.A. Sawchuk, and C. von der Malsburg, "Photonic Implementations of Neural Networks", OSA Technical Digest Series Vol. 10, 128 (1995).

  17. Q. Xie, A. Madhukar, P. Chen, N. Kobayashi, "Vertically Self-Organized InAs quantum box islands on GaAs(100)", Phys. Rev. Letters 75, 2542 (1995).

  18. Q. Xie, N.P. Kobayashi, T.R. Ramachandran, A. Kalburge, P. Chen, and A. Madhukar, "InAs Island Quantum Box Formation and Vertical Self-Organization on GaAs (100) Via molecular Beam Epitaxy", Paper presented at MRS Spring '95 Meeting (April 17-21, 1995, San Francisco, CA), MRS Symposium Proc. 379, 177-183 (1995).

  19. A. Konkar, A. Madhukar, and P. Chen, "Creating 3-D Confined Nanoscale Strained Structures Via Substrate Encoded Size-Reducing Epitaxy and The Enhancement of Critical Thickness for Island Formation", Paper presented at MRS Spring '95 Meeting (April 17-21, 1995, San Francisco, CA), MRS Symposium Proc. 380, 17-22 (1995).

  20. A. Madhukar, A. Konkar, and P. Chen, "In-Situ Formation of Laterally Confined Semiconductor Structures Via Growth on Nonplanar Patterned Substrates", Paper presented at the Third IU-MRS International Conference (October 17-20, 1995, Seoul, Korea), IUMRS-ICA '95 Proc., Eds. S.W. Kim and S.J. Park, 1173-1181 (1995).

  21. A. Madhukar, W. Yu, R. Viswanathan, and P. Chen, "Some Computer Simulations of Semiconductor Thin Film Growth and Strain Relaxation in a Unified Atomistic and Kinetic Model", MRS Symposium Proceedings 408, 413 (1995).

  22. Q. Xie, N.P. Kobayashi, T.R. Ramachandran, A. Kalburge, P. Chen, and A. Madhukar, "Strained Coherent InAs Quantum box islands on GaAs(100): Size equalization, vertical self-organization and optical properties", Jour. Vac. Sci. Tech. B14(3), (May/June 1996).

  23. N.P. Kobayashi, T.R. Ramachandran, P. Chen, and A. Madhukar, "In-Situ, atomic force microscope studies of the evolution of InAs three-dimensional islands on GaAs(001)", Appl. Phys. Lett. 68(23), 3299 (1996).

  24. R.F. Cartland, P. Chen, and A. Madhukar, "High contrast, large area, inverted, 2D spatial light modulators for flip chip bonding to silicon microelectronic driver chips", OSA Annual Meeting, Oct. 20-24, 1996, Rochester, New York, paper TuCC3 (1996) .

  25. A. Madhukar, "A unified atomistic and kinetic framework for growth front morphology evolution and defect initiation in strained epitaxy", Journal of Crystal Growth 163, 149-164 (1996) .

  26. D.H. Rich, H.T. Lin, A. Konkar, P. Chen, and A. Madhukar, "Time-resolved cathodoluminescence study of carrier relaxation in GaAs/AlGaAs layers grown on a patterned GaAs(001) substrate", Appl. Phys. Lett. 69(5), 665 (1996).

  27. Q. Xie, A. Kalburge, P. Chen, and A. Madhukar, "Observation of lasing from vertically self-organized InAs three-dimensional island quantum boxes on GaAs(001)", IEEE Photonics Technology Letters, Vol. 8, 965. (1996).

  28. R. Heitz, A. Kalburge, Q. Xie, M. Veit, M. Grundmann, P. Chen, A. Madhukar, and D. Bimberg, "Energy relaxation in InAs/GaAs quantum dots", Proc. of the 23rd Int. Conf. on the Physics of Semiconductors, Berlin Germany, 1996, Edited by M. Scheffler and R. Zimmermann, 1425, (World Scientific, Singapore, 1996).

  29. P. Chen, A. Konkar, H.T. Lin, D.H. Rich, and A. Madhukar, "Lattice-matched and mismatched quantum boxes fabricated via size-reducing growth on nonplanar patterned substrates", Proc. of the 23rd Int. Conf. on the Physics of Semiconductors, Berlin, Germany, 1996, Edited by M. Scheffler and R. Zimmermann, 1277, (World Scientific, Singapore, 1996).

  30. A. Konkar, H.T. Lin, D.H. Rich, P. Chen, A. Madhukar, "Growth controlled fabrication and cathodoluminescence study of 3D confined GaAs volumes on non-planar patterned GaAs(001) substrates", J. Crys. Growth 175/176, 741 (1997).

  31. T.R. Ramachandran, R. Heitz, P. Chen, and A. Madhukar, "Mass transfer in Stranski-Krastanow growth of InAs on GaAs", Appl. Phys. Lett. 70(5), 640 (1997).

  32. D. H. Rich, H. T. Lin, A. Konkar, P. Chen, and A. Madhukar, "Cathodoluminescence study of band filling and carrier thermalization in GaAs/AlGaAs quantum boxes", J. Appl. Phys. 81, 1781 (1997).

  33. H.T. Lin, D.H. Rich, A. Konkar, P. Chen and A. Madhukar, "Carrier relaxation and recombination in GaAs/AlGaAs quantum heterostructures and nanostructures probed with time-resolved cathodoluminescence," J. Appl. Phys. 81, 3186 (1997).

  34. R. Heitz, T.R. Ramachandran, A. Kalburge, Q. Xie, I. Mukhametzhanov, P. Chen and A. Madhukar, "Observation of re-entrant 2D to 3D morphology transition in highly strained epitazy: InAs on GaAs", Phys. Rev. Lett. 78, 4071 (1997).

  35. T. R. Ramachandran, R. Heitz, N.P. Kobayashi, A. Kalburge, W. Yu, P. Chen, and A. Madhukar, "Re-entrant behavior of 2D to 3D morphology change and 3D island lateral size equalization via mass exchange in Stranski-Krastanow growth: InAs on GaAs (001)", J. Cryst. Growth, 175/176, 216 (1997).

  36. A. Kalburge, A. Konkar, T.R. Ramachandran, P. Chen and A. Madhukar, "Focused ion beam assisted chemically etched mesas on GaAs(001) and the nature of subsequent molecular beam epitaxial growth", J. Appl. Phys. 82, 859 (1997).

  37. A. Kalburge, T.R. Ramachandran, R. Heitz, N.P. Kobayashi, Q. Xie, P. Chen, and A. Madhukar, "Optical investigations of InAs growth on GaAs and lasing in singly and multiply stacked island quantum boxes", MRS Proc. 448, 487 (1997).

  38. T.R. Ramachandran, N.P. Kobayashi, P. Chen, and A. Madhukar, "The formation and evolution of InAs 3D islands on GaAs(001) and a comparative C-AFM and NC-AFM study of InAs 3D islands", MRS Proc. 440, 31 (1997).

  39. W. Yu and A. Madhukar, "Molecular Dynamics study of coherent island energetics, stresses, and strains in highly strained epitaxy", Phys. Rev. Lett. 79, 905 (1997).

  40. T.R. Ramachandran, A. Madhukar, P. Chen and B.E. Koel, "Imaging and Direct Manipulation of Nanoscale Three-Dimensional Features using the Noncontact Atomic Force Microscope", Jour. Vac. Sc. Tech. A 16, 1425 (1998).

  41. I.G. Rosen, T. Parent, C. Cooper, P. Chen, and A. Madhukar, "A Neutral Network Based Approach to Determining a Robust Process Recipe for the Plasma Enhanced Deposition of Silicon Nitride Thin Films", IEEE Trans. on Control Systems Technology (under Review).

  42. C. Wang, P. Chen, A. Madhukar, and T. Khan, "A Machine Condition Transfer Function Approach to Run-to-Run and Machine-to-Machine Reproducibility of III-V Compound Semiconductor Molecular Beam Epitaxy", IEEE Trans. Semiconductor Manufacturing 12, 66 (1999).

  43. M. Bachlechner, A. Omeltchenko, A. Nakano, R. Kalia, P. Vashishta, I. Ebbsjo, A. Madhukar, and P. Messina, "Multimillion-Atom Molecular Dynamics Simulation of Atomic Level Stresses in Si(111)/Si3N4(0001) Nanopixels", Appl. Phys. Lett. 72, p. 1969 (1998).

  44. A. Omeltchenko, M. Bachlechner, A. Nakano, R. Kalia, P. Vashishta, I. Ebbsjo, A. Madhukar, and P. Messina, "Stress Domains in Si(111)/a0Si3N4 Nanopixel-10 million-Atom Molecular Dynamics Simulations on Parallel Computers", Phys. Rev. Lett (Submitted Feb. '98).

  45. A. Nakano, M. Bachlechner, T. Campbell, R. Kalia, A. Omeltchenko, K. Tsuruta, P. Vashishta, S. Ogata, I. Ebbsjo, A. Madhukar, "Atomistic Simulation of Nanostructured Materials Using Parallel Multiresojution Algorithms", IEEE Computational Science & Engineering, p. 68 (Oct.-Dec. 1998).

  46. A. Madhukar, T.R. Ramachandran, A. Konkar, I. Mukhametzhanov, W. Yu, P. Chen, "On the atomistic and kinetic nature of strained epitaxy and formation of coherent 3D island quantum boxes", Appl. Surface Science, 123/124, 266 (1998).

  47. A. Konkar, A. Madhukar, and P. Chen, "Stress-engineered spatially selective self-assembly of strained InAs quantum dots on nonplanar patterned GaAs(001) substrates", Appl. Phys. Lett. 72, 220 (1998).

  48. T. Parent, R. Heitz, P. Chen, and A. Madhukar, "Real-time Feedback control of thermal Cl2 etching of GaAs based on in-situ spectroscopic ellipsometry", MRS Symp. Proc. 502, 71 (1998).

  49. I.G. Rosen, T. Parent, P. Chen, C. Wang, R. Heitz, M. Nagarajan, and A. Madhukar, "Feedback Control of Thermal Chlorine (Cl2) Etching of Gallium Arsenide (GaAs) Using In-Situ Spectroscopic Ellipsometry Sensing", Proc. American Control Conf., p. 2150 (1998).

  50. C. Baur, A. Bugacov, B.C. Gazen, B. Koel, A. Madhukar, T.R. Ramachandran, A.A.G. Requicha, R. Resch, and P. Will, "Nanoparticle Manipulation by Mechanical Pushing: Underlying Phenomena and Real-Time Monitoring", Science (Submitted Mar. '98).

  51. T.R. Ramachandran, C. Baur, A. Bugacov, A. Madhukar, B.E. Koel, A. Requicha, and C. Gazen, "Direct and Controlled Manipulation of Nanometer-Sized Particles Using the Non-Contact Atomic Force Microscope", Nanotechnology 9, 237 (1998).

  52. A.A.G. Requicha, C. Baur, A. Bugacov, B.C. Gazen, B. Koel, A. Madhukar, T.R. Ramachandran, R. Resch, P. Will, "Nanorobotic Assembly of Two-Dimensional Structures", Proc. ICRA Conf. (1998).

  53. R. Heitz, A. Kalburge, Q. Xie, M. Grandmann, P. Chen, A. Hoffmann, A. Madhukar, D.Bimberg, "Excited States and Energy Relaxation in Stacked InAs/GaAs Quantum Dots", Phys. Rev. B 57, 9050 (1998).

  54. T.R. Ramachandran, A. Madhukar, I. Mukhametzhanov, R. Heitz, A. Kalburge, Q. Xie, P. Chen, "Nature of Stranski-Krastanow growth of InAs on GaAs(001)", J. Vac. Sci. Technol. B 16(3), 1330 (1998).

  55. P. Chen, C. Wang, A. Madhukar, T. Khan, A. Small, Z. Yan, R. Viswanathan, "Reflection High-Energy Electron Diffraction as an Intrinsic Material Property Sensor for Machine Condition Transfer Function in Molecular Beam Epitaxial Growth of III-IV Compound Semiconductors", MRS Proc. 502, 47 (1998).

  56. Y. Tang, D. H. Rich, I. Mukhametzhanov, P. Chen, and A. Madhukar, "Self-assembled InAs/GaAs quantum dots studied with excitation dependent cathodoluminescence", J. Appl. Phys. 84, 3342 (1998).

  57. I. Mukhametzhanov, R. Heitz, J. Zeng, P. Chen, and A. Madhukar, "Independent Manipulation of Density and Size of Stress-Driven Self Assembled Quantum Dots", Appl. Phys. Lett. 73, 1841 (1998).

  58. R. Heitz, I. Mukhametzhanov, P. Chen, and A. Madhukar, "Excitation Transfer in Self-Organized Asymmetric quantum-dot pairs", Phys. Rev. B 58, R10151 (1998).

  59. R. Heitz, M. Veit, A. Kalburge, Q. Xie, M. Grundmann, P.Chen, N.N. Ledentsov, A. Hoffmann, A. Madhukar, D. Bimberg, V. M. Ustinov, P.S. Kop'ev, Zh.I. Alferov, "Hot carrier relaxation in InAs/GaAs quantum dots", Physica E 2, 578 (1998).

  60. R. Resch, A. Bugacov, B.E. Koel, A. Madhukar, A.A.G. Requicha, P. Will, `Manipulation of nanoparticles using dynamic force microscopy: simulation and experiments", Appl. Phys. A67, 265 (1998).

  61. D. H. Rich, Y. Tang, A. Konkar, P. Chen, A. Madhukar, "Polarized cathodluminescence study of selectively grown self-assembled InAs/GaAs quantum dots," J. Appl. Phys. 84, 6337 (1998).

  62. I.G. Rosen, T. Parent, C. Cooper, P. Chen, and A. Madhukar, "Locating Sensitivity Minimizing Process Inputs in the Plasma Enhanced Chemical Vapor Deposition (PECVD) of Sillicon Nitride Thin Films: A Neural Network Based Approach" American Control Conference (In Press).

  63. C. Baur, A. Bugacov, B.E. Koel, A. Madhukar, N. Montoya, T.R. Ramachandran, A.A.G. Requicha, R. Resch, and P. Will, "Nanoparticle manipulation by mechanical pushing: underlying phenomena and real-time monitoring", Nanotechnology 9, 360 (1998).

  64. R. Resch, C. Baur, A. Bugacov, B.E. Koel, A. Madhukar, and A.A.G. Requicha, "Building and manipulating 3-D and linked 2-D structures of nanoparticles using scanning force microscopy", Langmuir 14 (1998).

  65. C. Wang, P. Chen, A. Madhukar and T. Kahn, "A Machine Condition Transfer Function Approach to Run-to-Run and Machine-to-Machine Reproducibility of III-V Compound Semiconductor Molecular Beam Epitaxy",IEEE Trans. Semiconductor Manufacturing 12, 66 (1999).

  66. M. Bachlechner, A. Omeltchenko, K. Tsuruta, A. Nakano, R. Kalia, P. Vashishta, I. Ebbsjo, A Madhukar, "Structural Correlations and Stress Distribution at Silicon/Silicon Nitride Interface", Oxford Press (1999).

  67. R. Heitz, I. Mukhametzhanov, J. Zeng, P. Chen, A. Madhukar, D. Bimberg, "Excitation transferin novel self-organized quantum dot structures", Superlatices and Microstructures, 25, No 1/2, 97(1999).

  68. R. Heitz, I. Mukhametzhanov, A. Madhukar, A. Hoffmann, D. Bimberg, "Temperature dependent optical properties of self organized InAs/GaAs quantum dots", J. Electronic Materials 28, 520 (1999).

  69. I. Mukhametzhanov, Z. Wei, R. Heitz, & A. Madhukar, "Punctuated Island Growth: An Approach to Examination and Control of Quantum Dot Density, Size, and Shape Evolution", Appl. Phys. Lett. 75, 85 (1999).

  70. R. Heitz, I. Mukhametzanov, H. Born, M. Grundmann, A. Hoffman, A. Madhukar, D. Bimberg, "Hot carrier relaxation in InAs/GaAs quantum dots" Physica B272, 8 (1999).

  71. R. Heitz, I. Mukhametzhanov, O. Stier, A. Madhukar, and D. Bimberg, "Enhanced Polar Exciton-LO-Phonon Interaction in Quantum Dots", Phys.Rev. Lett., 83, 4654 (1999).

  72. R. Resch, C. Baur, A. Bugacov, B.E. Koel, P.M. Echternack, A. Madhukar, N. Montoya, A.A.G. Requicha, and P. Will, "Linking and Manipulation of Gold and Multinanoparticle Structures Using Dithiols and Scanning Force Microscopy", J. Phys. Chem. B103, 3647 (1999).

  73. R. Heitz, I. Mukhametzhanov, O. Stier, A. Hoffmann, A. Madhukar, and D. Bimberg, "Electronic properties of InAs/GaAs quantum dots", SQS Proc. (In Press)

  74. R. Resch, D. Lewis, S. Meltzer, N. Montoya, B.E. Koel, A. Madhukar, A.A.G. Requicha, P. Will, "Manipulation of gold nanoparticles in liquid environments using scanning force microscopy", Ultramicroscopy 82 135 (2000).

  75. M.A. Makeev and A. Madhukar, "Simulations of atomic level stresses in systems of buried Ge/Si islands", Phys. Rev. Lett. 86, 5542 (2001).

  76. S. Meltzer, R. Resch, B.E. Koel, M.E. Thompson,, A. Madhukar, A.A.G. Requicha, and P.Will, "Fabrication of Nanostructures by Hydroxylamine Seeding of Gold Nanoparticle Templates", Langmuir, 17, 1713 (2001).

  77. R. Resch, S. Meltzer, T. Vallant, H. Hoffman, B.E. Koel, a. Madhukar, A.A.G. Requicha, and P. Will, "Immobilizing Au nanoparticles on SiO2 surfaces using octadecylsiloxane monolayers", Langmuir, 17, 5666 (2001).

  78. A. Madhukar, "Stress Engineered Quantum dots: Nature's Way", in "Nano Optoelctronics: Concepts, Physics, and Devices", Ed. M. Grundmann, Springer-Verlag, (Berline 2002).